ZN-DOPED VAPOR-GROWN INP

被引:10
|
作者
CHEVRIER, J
HUBER, A
LINH, NT
机构
关键词
D O I
10.1063/1.327303
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:815 / 817
页数:3
相关论文
共 50 条
  • [31] Thermodynamic analysis for vapor-grown diamond
    张卫
    万永中
    王季陶
    ProgressinNaturalScience, 1997, (04) : 96 - 100
  • [32] BEHAVIOR OF TE IN VAPOR-GROWN GAP
    TAYLOR, RC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 364 - +
  • [33] A VAPOR-GROWN VARIABLE CAPACITANCE DIODE
    ANDERSON, RL
    OROURKE, MJ
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 264 - 268
  • [34] INCORPORATION OF AU INTO VAPOR-GROWN GE
    BAKER, WE
    COMPTON, DMJ
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) : 296 - 298
  • [35] Vapor-grown atomic filaments of graphite
    Okuyama, F
    Hayashi, T
    Kawasaki, M
    Ibe, K
    APPLIED PHYSICS LETTERS, 2000, 76 (02) : 161 - 163
  • [36] GAAS VAPOR-GROWN BIPOLAR TRANSISTORS
    NUESE, CJ
    GOSSENBERGER, HF
    ENSTROM, RE
    DEAN, RH
    GANNON, JJ
    SOLID-STATE ELECTRONICS, 1972, 15 (01) : 81 - +
  • [37] Surface morphology of vapor-grown layers
    Gavrishchuk, EM
    Krupkin, PL
    Kuznetsov, LA
    INORGANIC MATERIALS, 1997, 33 (11) : 1117 - 1120
  • [38] BEHAVIOR OF TE IN VAPOR-GROWN GAP
    TAYLOR, RC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C102 - &
  • [39] KINETICS OF VAPOR-GROWN TELLURIUM WHISKERS
    FURUTA, N
    OHASI, Y
    ITINOSE, H
    IGARASHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 929 - 934
  • [40] The characteristics of Zn-doped InP using spin-on dopant as a diffusion source
    Yoon, KH
    Lee, YH
    Yeo, DH
    Kim, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (04) : 244 - 247