ZN-DOPED VAPOR-GROWN INP

被引：10

作者：

CHEVRIER, J

HUBER, A

LINH, NT

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：815 / 817

页数：3

共 15 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[2]

CHEVRIER JM, UNPUBLISHED

[3]

DUCHEMIN JP, 1979, I PHYS C SER, V45, pR20

[4] FREE AND BOUND ELECTRON TRANSITIONS TO ACCEPTORS IN INDIUM PHOSPHIDE [J].

FISCHBACH, JU ;

PILKUHN, MH ;

BENZ, G ;

STATH, N .

SOLID STATE COMMUNICATIONS, 1972, 11 (05) :725-+

[5] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[6] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[7] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE [J].

MILLER, BI ;

MCFEE, JH ;

MARTIN, RJ ;

TIEN, PK .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :44-47

[8]

MOUTOU P, 1979, I PHYS C SER, V45, P452

[9] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J].

OLSEN, GH ;

NUESE, CJ ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :262-264

[10]

PILKULN MH, COMMUNICATION

← 1 2 →