SMALL-SIGNAL HIGH-FREQUENCY RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：5

作者：

CHERRY, EM

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1970.17033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：569 / +

页数：1

共 19 条

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[2] Benham WE, 1928, PHILOS MAG, V5, P641
[3] A SMALL-SIGNAL HIGH-FREQUENCY ANALYSIS OF INSULATED-GATE FIELD-EFFECT TRANSISTOR
CANDLER, DB
JORDAN, AG
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1965, 19 (02) : 181 - &
[4] CHERRY EM, 1968, AMPLIFYING DEVICES L, P63
[5] CHERRY EM, 1968, AMPLIFYING DEVICES L, P35
[6] CHERRY EM, TO BE PUBLISHED
[7] CHARGE-CONTROL ANALYSIS OF MOS AND JUNCTION-GATE FIELD-EFFECT TRANSISTORS
DAS, MB
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (10): : 1565 - +
[8] SMALL-SIGNAL HIGH-FREQUENCY EQUIVALENT CIRCUIT FOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
HASLETT, JW
TROFIMENKOFF, FN
[J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (05): : 699 - +
[9] SMALL SIGNAL PROPERTIES OF FIELD EFFECT DEVICES
HAUSER, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 605 - +
[10] JUNCTION CAPACITANCE OF FIELD EFFECT TRANSISTORS
LINDHOLM, FA
LATHAM, DC
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (02) : 404 - &