DEPTH PROFILING OF DEUTERIUM IMPLANTED IN THIN-FILMS BY THE ELASTIC RECOIL DETECTION TECHNIQUE OF TRANSMISSION GEOMETRY

被引：9

作者：

MORIMOTO, S ^{[1
]}

NAGATA, S ^{[1
]}

YAMAGUCHI, S ^{[1
]}

FUJINO, Y ^{[1
]}

机构：

[1] TOHOKU UNIV,DEPT NUCL ENGN,SENDAI,MIYAGI 980,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 48卷 / 1-4期

关键词：

Aluminum and Alloys - Deuterium - Helium - Ion Beams - Titanium and Alloys;

D O I：

10.1016/0168-583X(90)90165-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The elastic recoil detection technique of transmission geometry using 4He ion beams has been developed to measure the whole profile of hydrogen isotopes in thin films. As an application of this technique, the retention behavior of D atoms under D implantation has been observed in situ on Ti and Al films. On the Ti films, a flat distribution of D was observed at the beginning of the implantation. At higher implantation fluences, however, the surface segregation of D was clearly recognized. On the Al films we examined the re-emission and permeation behavior of the implanted D atoms at various temperatures. © 1990.

引用

页码：478 / 481

页数：4

共 9 条

[1] A CALCULATION OF THE SURFACE RECOMBINATION RATE-CONSTANT FOR HYDROGEN ISOTOPES ON METALS [J].