INVESTIGATION OF CRYSTAL-STRUCTURE OF CUBIC SILICON-CARBIDE LAYERS

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] SOME PROPERTIES OF VAPOR DEPOSITED SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1158 - &

[3] FELTIN IA, 1965, IZV AKAD NAUK LA FTN, P123

[4] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 138 - 143

[5] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[6] PROKOPOVICH IM, 1974, IZV AKAD NAUK LA FTN, P98

[7] SAIDOV MS, 1970, PROTESSI ROSTA KRIST, P299

[8] SAIDOV MS, 1973, IZV AKAD NAUK UZ FMN, P56

[9] SAIDOV MS, 1985, DOKL AKAD NAUK UZSSR, P26

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] SOME PROPERTIES OF VAPOR DEPOSITED SIC [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1158 - &

[3] FELTIN IA, 1965, IZV AKAD NAUK LA FTN, P123

[4] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 138 - 143

[5] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[6] PROKOPOVICH IM, 1974, IZV AKAD NAUK LA FTN, P98

[7] SAIDOV MS, 1970, PROTESSI ROSTA KRIST, P299

[8] SAIDOV MS, 1973, IZV AKAD NAUK UZ FMN, P56

[9] SAIDOV MS, 1985, DOKL AKAD NAUK UZSSR, P26