BLUE PHOTOLUMINESCENCE FROM RAPID THERMALLY OXIDIZED POROUS SILICON FOLLOWING STORAGE IN AMBIENT AIR

被引:44
作者
LONI, A
SIMONS, AJ
CALCOTT, PDJ
CANHAM, LT
机构
[1] Defense Research Agency, Malvern
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.358587
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the temporal variation of the visible photoluminescence from rapid thermally oxidized porous silicon prepared from n+ substrates. In contrast to the red (slow band) emission, which is observable immediately after high-temperature oxidation, the blue (fast band) emission is shown to become prevalent only after samples are stored in ambient air. The intensity of the blue emission increases with progressive aging, the magnitude of the increase being dependent on the temperature at which the material is oxidized. Thermal treatment of aged rapid thermally oxidized material can reduce and even quench the blue photoluminescence. Quenching is reversible in that the photoluminescence re-appears after further aging at room temperature. © 1995 American Institute of Physics.
引用
收藏
页码:3557 / 3559
页数:3
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  • [1] STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON
    BATSTONE, JL
    TISCHLER, MA
    COLLINS, RT
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2667 - 2669
  • [2] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON
    CALCOTT, PDJ
    NASH, KJ
    CANHAM, LT
    KANE, MJ
    BRUMHEAD, D
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : L91 - L98
  • [3] SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON
    CALCOTT, PDJ
    NASH, KJ
    CANHAM, LT
    KANE, MJ
    BRUMHEAD, D
    [J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 257 - 269
  • [4] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE
    CANHAM, LT
    HOULTON, MR
    LEONG, WY
    PICKERING, C
    KEEN, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 422 - 431
  • [5] CORRELATION OF THE STRUCTURAL AND OPTICAL-PROPERTIES OF LUMINESCENT, HIGHLY OXIDIZED POROUS SILICON
    CULLIS, AG
    CANHAM, LT
    WILLIAMS, GM
    SMITH, PW
    DOSSER, OD
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 493 - 501
  • [6] FAST AND SLOW VISIBLE LUMINESCENCE BANDS OF OXIDIZED POROUS SI
    KOVALEV, DI
    YAROSHETZKII, ID
    MUSCHIK, T
    PETROVAKOCH, V
    KOCH, F
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 214 - 216
  • [7] INVESTIGATION OF RAPID-THERMAL-OXIDIZED POROUS SILICON
    LI, KH
    TSAI, C
    CAMPBELL, JC
    HANCE, BK
    WHITE, JM
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3501 - 3503
  • [8] STABLE BLUE-LIGHT EMISSION FROM OXIDIZED POROUS SILICON
    LIN, J
    ZHANG, LZ
    ZHANG, BR
    ZONG, BQ
    QIN, GG
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1994, 6 (02) : 565 - 568
  • [9] COMPOSITIONAL VARIATIONS OF POROUS SILICON LAYERS PRIOR TO AND DURING ION-BEAM ANALYSES
    LONI, A
    SIMONS, AJ
    CANHAM, LT
    PHILLIPS, HJ
    EARWAKER, LG
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 2825 - 2832
  • [10] BLUE-LIGHT EMISSION FROM RAPID-THERMAL-OXIDIZED POROUS SILICON
    MIMURA, H
    FUTAGI, T
    MATSUMOTO, T
    NAKAMURA, T
    KANEMITSU, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 586 - 589