RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

被引：2

作者：

XU, TB

ZHU, PR

LI, DQ

REN, TQ

SUN, HL

WAN, SK

机构：

[1] YANTAI TEACHERS COLL,YANTAI 264025,PEOPLES R CHINA

[2] CHINESE ACAD SCI,CTR MICROELECTR R&D,BEIJING 100010,PEOPLES R CHINA

[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA

来源：

PHYSICS LETTERS A | 1994年 / 189卷 / 05期

关键词：

D O I：

10.1016/0375-9601(94)90028-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

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页码：423 / 427

页数：5

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