Energy and electronic characteristics of silicon polyprismanes: density functional theory study

被引:6
|
作者
Gimaldinova, M. A. [1 ]
Katin, K. P. [1 ,2 ]
Salem, M. A. [1 ,3 ]
Maslov, M. M. [1 ,2 ]
机构
[1] Natl Res Nucl Univ MEPhI, 31 Kashirskoe Shosse, Moscow 115409, Russia
[2] Res Inst Dev Sci & Educ Potential Youth, 14-55 Aviatorov Str, Moscow 119620, Russia
[3] Zagazig Univ, Dept Phys, Fac Sci, Zagazig 44519, Egypt
来源
LETTERS ON MATERIALS | 2018年 / 8卷 / 04期
基金
俄罗斯科学基金会;
关键词
silicon polyprismanes; density functional theory; geometry; energy and electronic characteristics;
D O I
10.22226/2410-3535-2018-4-454-457
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report structural, energetic and some electronic properties of [n, 4]-, [n, 5]-, and [n, 6] silaprismanes (polysilaprismanes), i. e. silicon nanotubes of a special type constructed from dehydrogenated molecules of cyclosilanes (silicon rings) Si-4(-), Si-5(-), and Si-6, respectively. For large n, polysilaprismanes can be considered as the analogs of silicon nanotubes with an extremely small cross-section in the form of a regular polygon. Binding energies, interatomic bonds, and the energy gaps between the highest and lowest occupied molecular orbitals (HOMO and LOMO, respectively) have been calculated using the density functional theory for the systems up to ten layers. It is found that [n, 4] silaprismane is not thermodynamically stable in the bulk limit (n ->infinity), while the [n, 5]-and [n, 6] silaprismanes conserve their highly strained framework and become more thermodynamically stable as the number of layers n increases. Moreover, the HOMO-LUMO gap analysis reveals that the [n, 5]-and [n, 6] silaprismanes with the large effective length can be referred to semimetals or even the conductors. So, they can be successfully used unlike the carbon analogs in nanoelectronics as functional nanowires or the basis for the computational logic elements without any additional doping or applying the mechanical stresses. Thicknesses of silaprismanes are comparable with that of the smallest carbon nanotubes.
引用
收藏
页码:454 / 457
页数:4
相关论文
共 50 条
  • [1] The Effects of Doping on the Electronic Characteristics and Adsorption Behavior of Silicon Polyprismanes
    Grishakov, Konstantin
    Katin, Konstantin
    Maslov, Mikhail
    COMPUTATION, 2020, 8 (02)
  • [2] Optical and Electronic Properties of Hydrogenated Silicon Nanoclusters and Nitrogen Passivated Silicon Nanoclusters: A Density Functional Theory Study
    Lee, Seung Mi
    Kim, Kyung Joong
    Moon, Dae Won
    Kim, Hanchul
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5835 - 5838
  • [3] Stability and energy characteristics of extended nitrogen nanotubes: density functional theory study
    Grishakov, K. S.
    Katin, K. P.
    Gimaldinova, M. A.
    Maslov, M. M.
    LETTERS ON MATERIALS, 2019, 9 (03): : 366 - 369
  • [4] A density functional theory study of electronic properties of transition metals doped silicon carbide monolayer
    Majid, Abdul
    Kanwal, Hajra
    Khan, Salahuddin
    Khan, Shaukat
    INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 2022, 122 (09)
  • [5] Density Functional Theory Study of the Electronic Structures of Galena
    Kang, Jianxiong
    An, Yanni
    Xue, Jiwei
    Ma, Xiao
    Li, Jiuzhou
    Chen, Fanfan
    Wang, Sen
    Wan, He
    Zhang, Chonghui
    Bu, Xianzhong
    PROCESSES, 2023, 11 (02)
  • [6] Chemisorption of silicon tetrachloride on silicon nitride: a density functional theory study
    Chowdhury, Tanzia
    Khumaini, Khabib
    Hidayat, Romel
    Kim, Hye-Lee
    Lee, Won-Jun
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2024, 26 (15) : 11597 - 11603
  • [7] Electronic and magnetic properties of silicon supported organometallic molecular wires: a density functional theory (DFT) study
    Liu, Xia
    Tan, Yingzi
    Li, Xiuling
    Wu, Xiaojun
    Pei, Yong
    NANOSCALE, 2015, 7 (32) : 13734 - 13746
  • [8] Density functional theory calculations of electronic structure in silicon double quantum dots
    Howard, P.
    Andreev, A.
    Williams, D. A.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3156 - +
  • [9] Density Functional Theory to Calculate Accurate Defect Energy Levels in Silicon
    Rougieux, Fiacre E.
    Hossain, Md. Anower
    Hoex, Bram
    SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS, 2023, 2826