THERMAL-CHANGE OF SNI2 THIN-FILMS .1. THERMOGRAVIMETRY

被引：15

作者：

SAWADA, Y

SUZUKI, M

机构：

[1] Department of Industrial Chemistry, Faculty of Engineering, Tokyo Institute of Polytechnics, Atsugi-shi, Kanagawa, 243-02

来源：

THERMOCHIMICA ACTA | 1994年 / 232卷 / 01期

关键词：

D O I：

10.1016/0040-6031(94)80042-1

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Thermal change of tin iodide (SnI2) evaporated film as-deposited on a glass substrate has been successfully detected by TG (heating rate, 10-degrees-C/min-1) film mass about 0.5 mg, film area about 2 cm2. A mass loss at 260-420-degrees-C in an argon flow is attributed to the evaporation of SnI2. A mass loss at 180-290-degrees-C in an air flow is interpreted as oxidation of SnI2 to form SnI4 vapor and tin oxide. The TG-DTA for SnI2 and SnI4 powders in a nitrogen flow (heating rate, 10-degrees-C min have been performed to understand the thermal change of SnI2 thin films; an endothermic phenomenon without mass change attributed to melting at 319 and 144-degrees-C and an endothermic mass loss attributed to evaporation at 300-460 and 85-190-degrees-C were observed for SnI2 and SnI4 powders, respectively. A small mass loss (about 7%) at 85-150-degrees-C for SnI2 powders is attributed to the evaporation of SnI4 impurity.

引用

页码：29 / 36

页数：8

共 13 条

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