GaAs-Cs: A NEW TYPE OF PHOTOEMITTER

被引：226

作者：

Scheer, J. J. ^{[1
]}

van Laar, J. ^{[1
]}

机构：

[1] NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 08期

关键词：

D O I：

10.1016/0038-1098(65)90289-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

From elementary considerations it Is concluded that the system p-type GaAs-Cs should have very good properties as a photoemitter. This was verified by experiments on vacuum cleaved single crystals. After covering with cesium a maximum overall sensitivity of 500 mu A/Lumen and a long wavelength threshold of 9000 A were measured.

引用

页码：189 / 193

页数：5

共 11 条

[1] ALLEN FG, 1965, PHYS REV, V137, P245
[2] APKER L, 1948, PHYS REV, V74, P1962
[3] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS
EHRENREICH, H
PHILLIPS, JC
PHILIPP, HR
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (02) : 59 - &
[4] Hamilion P.H., 1964, SEMICOND PROD SOLID, V7, P15
[5] PHOTOELECTRIC EMISSION AND WORK FUNCTIONS OF INSB, GAAS, BI2TE3 AND GERMANIUM
HANEMAN, D
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 205 - &
[6] HILSUM C, 1961, SEMICONDUCTING 3 5 C, pCH7
[7] PERIA W, COMMUNICATION
[8] SCHEER JJ, 1961, PHILIPS RES REP, V16, P323
[9] PHOTOEMISSION AND RELATED PROPERTIES OF THE ALKALI-ANTIMONIDES
SPICER, WE
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2077 - 2084
[10] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +

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