GaAs-Cs: A NEW TYPE OF PHOTOEMITTER

被引：229

作者：

Scheer, J. J. ^{[1
]}

van Laar, J. ^{[1
]}

机构：

[1] NV Philips Gloeilampenfabrieken, Philips Res Labs, Eindhoven, Netherlands

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 08期

关键词：

D O I：

10.1016/0038-1098(65)90289-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

From elementary considerations it Is concluded that the system p-type GaAs-Cs should have very good properties as a photoemitter. This was verified by experiments on vacuum cleaved single crystals. After covering with cesium a maximum overall sensitivity of 500 mu A/Lumen and a long wavelength threshold of 9000 A were measured.

引用

页码：189 / 193

页数：5

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