ENERGY-BAND STRUCTURE FOR STRAINED P-TYPE SI1-XGEX

被引：47

作者：

MANKU, T

NATHAN, A

机构：

[1] Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.43.12634

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of the valence-band structure in strained Si1-xGex are given as a function of the germanium content, x. The interactions between the p3/2 and p1/2 bands are taken into account by using a 6 X 6 Hamiltonian in the form of the JM(J) representation. The Hamiltonian is given in two parts, viz., the unstrained Hamiltonian of Dresselhaus, Kip, and Kittel, and the strained Hamiltonian of Kleiner and Roth. With this 6 X 6 Hamiltonian, the hole-energy spectrum for the two p3/2 bands and the p1/2 band is obtained; knowledge of which is crucial for determining pertinent electronic-transport data.

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页码：12634 / 12637

页数：4

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