NONLINEAR RECOMBINATION PROCESSES IN PHOTOVOLTAIC SEMICONDUCTORS

The single-lifetime model is commonly used to describe recombination in photovoltaic materials. Here we describe two non-linear processes which affect the applicability of that model. Photon recycling is observed in direct band gap materials such as GaAs. This self-absorption and secondary emission of photons makes the effective radiative lifetime a function of device geometry. The saturation of recombination centers by minority carriers produces light intensity dependent lifetimes when the former are present. These effects need to be considered in device design and modeling.