INVESTIGATION OF TRAP LEVELS IN GAAS SCHOTTKY DIODES BY ADMITTANCE SPECTROSCOPY

被引：9

作者：

HOFFMANN, HJ

REISSER, H

机构：

[1] Institut Für Angewandte Physik, Universität Karlsruhe

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 02期

关键词：

D O I：

10.1002/pssa.2210510260

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K171 / K174

页数：4

共 10 条

[1]

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214

[3]

Milnes A., 1973, DEEP IMPURITIES SEMI

[4] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

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APPLIED PHYSICS, 1975, 8 (01) :15-21

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[7] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J].

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[8] CONDUCTANCE AND CAPACITANCE STUDIES IN GAP SCHOTTKY BARRIERS [J].

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[9] SPECTROSCOPY OF TRAPS IN GAALAS ELECTROLUMINESCENT DIODES [J].

VINCENT, G .

SOLID STATE COMMUNICATIONS, 1976, 19 (06) :559-561

[10] DETERMINATION OF DEEP ELECTRON TRAPS IN GAAS BY TIME-RESOLVED CAPACITANCE MEASUREMENT [J].

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APPLIED PHYSICS, 1977, 13 (01) :5-13

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