NONLINEARITY OF THIN-FILM SEMICONDUCTOR INTERFEROMETERS DUE TO INTERLAYER BOUNDARY PHOTOEMF AND ELECTROOPTIC PROCESSES

被引：1
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KARPUSHKO, FV
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JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-2期
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10.1051/jphyscol:1988219
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页码：87 / 90
页数：4
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