PLANAR GAAS IC TECHNOLOGY - APPLICATIONS FOR DIGITAL LSI

[1] CASEY HC, POINT DEFECTS SOLIDS, V2, P163

[2] DRANGEID KE, ELECTRON LETT, V6, P228

[3] Eden R. C., 1978, 1978 IEEE International Solid-State Circuits Conference (Digest of technical papers), P68

[4] LOW-POWER DEPLETION MODE ION-IMPLANTED GAAS FET INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1209 - 1210

[5] EISEN FH, 1976, TREATISE SOLID STA B, V6, P125

[6] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J]. ELECTRONICS LETTERS, 1976, 12 (01) : 17 - 18

[7] HIGGINS JA, 1977, 1976 P INT GAAS S B, V33, P236

[8] HILSUM C, 1965, PROGR SEMICONDUCTORS, V7, P135

[9] NOTTHOFF JK, 1975, IEDM TECH DIG, P624

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO

[1] CASEY HC, POINT DEFECTS SOLIDS, V2, P163

[2] DRANGEID KE, ELECTRON LETT, V6, P228

[3] Eden R. C., 1978, 1978 IEEE International Solid-State Circuits Conference (Digest of technical papers), P68

[4] LOW-POWER DEPLETION MODE ION-IMPLANTED GAAS FET INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1209 - 1210

[5] EISEN FH, 1976, TREATISE SOLID STA B, V6, P125

[6] PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J]. ELECTRONICS LETTERS, 1976, 12 (01) : 17 - 18

[7] HIGGINS JA, 1977, 1976 P INT GAAS S B, V33, P236

[8] HILSUM C, 1965, PROGR SEMICONDUCTORS, V7, P135

[9] NOTTHOFF JK, 1975, IEDM TECH DIG, P624

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO