SEMI-PHENOMENOLOGICAL THEORY OF N ISOELECTRONIC TRAP IN GAAS1-XPX

被引：0

作者：

HSU, WY ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：41 / 41

页数：1

共 50 条

[21] RECOMBINATION PROCESSES INVOLVING ZN AND N IN GAAS1-XPX
CAMPBELL, JC
HOLONYAK, N
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PHYSICAL REVIEW B, 1974, 10 (04): : 1755 - 1757
[22] SPONTANEOUS AND STIMULATED EMISSION INVOLVING N ISOELECTRONIC TRAP IN GAAS1-XPX-N AND IN 1-XGAXP-N
HOLONYAK, N
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 108 - 109
[23] THEORETICAL STUDY ON THE NITROGEN ISOELECTRONIC TRAP IN GaAs1 - xPx.
Li Hanqiu
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[24] GAAS1-XPX INJECTION LASERS
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NELSON, H
TIETJEN, JJ
HEGYI, IJ
MARUSKA, HP
RCA REVIEW, 1967, 28 (04): : 560 - &
[25] GAAS1-XPX PHOTODIODES FOR CAMERAS
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[26] REFLECTIVITY OF GAAS1-XPX ALLOYS
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[27] DONOR STATES IN GAAS1-XPX
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PIKHTIN, AN
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[28] EPITAXIAL GROWTH OF GAAS1-XPX
OGIRIMA, M
KURATA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (10) : 1474 - &
[29] STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) OF DIRECT AND INDIRECT GAAS1-XPX ON NITROGEN ISOELECTRONIC TRAP TRANSITIONS
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ZACK, GW
HOLONYAK, N
KEUNE, DL
MACKSEY, HM
DUPUIS, RD
GROVES, WO
CRAFORD, MG
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2368 - &
[30] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
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