SEMI-PHENOMENOLOGICAL THEORY OF N ISOELECTRONIC TRAP IN GAAS1-XPX

被引：0
作者：
HSU, WY [1 ]
机构：
[1] UNIV ILLINOIS,URBANA,IL 61801
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1977年 / 22卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：41 / 41
页数：1
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