FREE CARRIER ABSORPTION IN SILICON

被引：137

作者：

SCHRODER, DK

THOMAS, RN

SWARTZ, JC

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 02期

关键词：

D O I：

10.1109/T-ED.1978.19066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：254 / 261

页数：8

相关论文

共 14 条

[1] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION
GARDNER, EE
KAPPALLO, W
GORDON, CR
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &
[2] FREE CARRIER ABSORPTION IN P-TYPE SILICON
HARA, H
NISHI, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (06) : 1222 - &
[3] HOUSTON DE, 1976, TECHNICAL DIGEST 197, P504
[4] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON
HOWARTH, LE
GILBERT, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &
[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
JACOBONI, C
CANALI, C
OTTAVIANI, G
QUARANTA, AA
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89
[7] IMPURITY CONDUCTION IN SILICON
RAY, RK
FAN, HY
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 768 - &
[8] SILICON OPTICAL CONSTANTS IN INFRARED
SCHUMANN, PA
KEENAN, WA
TONG, AH
GEGENWARTH, HH
SCHNEIDER, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 145 - +
[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS
SCHUMANN, PA
PHILLIPS, RP
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 943 - &
[10] EXTRINSIC SILICON DETECTORS FOR 3-5 AND 8-14 MUM
SCLAR, N
[J]. INFRARED PHYSICS, 1976, 16 (04): : 435 - 448