REAR-GATE ISFET WITH A MEMBRANE LOCKING STRUCTURE USING AN ULTRAHIGH CONCENTRATION SELECTIVE BORON-DIFFUSION TECHNIQUE

被引：4

作者：

YAGI, H

SAKAI, T

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwaiku, Kawasaki, 210, 1, Komukai Toshiba-cho

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1993年 / 13卷 / 1-3期

关键词：

D O I：

10.1016/0925-4005(93)85364-G

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A new rear-gate ISFET with a membrane locking structure has been developed in order to enhance mechanically the adhesion strength in the sensitive membrane. It is necessary to form a deeply diffused ultrahigh concentration region of boron in order to construct a well-shaped and mechanically strong locking structure using selective anisotropic wet etching. A novel selective boron diffusion technique characterized by patterning a liquid-type diffusion source has been investigated and optimum conditions have been obtained for the first time. Applying the conditions, a rear-gate ISFET with a sufficiently mechanically strong locking structure has been fabricated. The characteristics (fundamental FET characteristics, pH response and potassium ion response) of the new ISFET are satisfactory and it is confirmed that the sensor durability is improved by adding the locking structure.

引用

页码：212 / 216

页数：5