Investigation of Electronic Parameters of Ag/N-Gap Schottky Barrier Diode

被引：1

作者：

Dagdelen, Fethi ^{[1
]}

Ozer, Metin ^{[2
]}

机构：

[1] Firat Univ, Fen Fak, Fizik Bolumu, Elazig, Turkey

[2] Firat Univ, Fen Fak, Fizik Bolumu, Ankara, Turkey

来源：

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI | 2015年 / 18卷 / 02期

关键词：

Schottky barrier; ideality factor; series resistance; n-GaP;

D O I：

10.2339/2015.18.2,93-97

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An Ag/n-GaP Schottky barrier diode was fabricated in vacuum with metal evaporating method. The electronic parameters were investigated by current-voltage (I-V) measurements at different temperatures. The electronic parameters such as ideality factor, barrier height and series resistance were determined from forward bias I-V measurement method and Cheung's functions at different temperatures. Results indicate that the barrier height of Ag/n-GaP diode increased with increase in temperature, while the ideality factor decreased. Ideality factor, barrier height and series resistance values are determined 2.01, 0.424 eV and 4.284 k Omega at 298 K, respectively.

引用

收藏

页码：93 / 97

页数：5

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