Investigation of Electronic Parameters of Ag/N-Gap Schottky Barrier Diode

被引：1
作者：
Dagdelen, Fethi [1 ]
Ozer, Metin [2 ]
机构：
[1] Firat Univ, Fen Fak, Fizik Bolumu, Elazig, Turkey
[2] Firat Univ, Fen Fak, Fizik Bolumu, Ankara, Turkey
来源：
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI | 2015年 / 18卷 / 02期
关键词：
Schottky barrier; ideality factor; series resistance; n-GaP;
D O I：
10.2339/2015.18.2,93-97
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An Ag/n-GaP Schottky barrier diode was fabricated in vacuum with metal evaporating method. The electronic parameters were investigated by current-voltage (I-V) measurements at different temperatures. The electronic parameters such as ideality factor, barrier height and series resistance were determined from forward bias I-V measurement method and Cheung's functions at different temperatures. Results indicate that the barrier height of Ag/n-GaP diode increased with increase in temperature, while the ideality factor decreased. Ideality factor, barrier height and series resistance values are determined 2.01, 0.424 eV and 4.284 k Omega at 298 K, respectively.
引用
收藏
页码：93 / 97
页数：5
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