LUMINESCENT PROPERTIES OF ENERGY-BAND-TAIL STATES IN GAAS-SI

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY H

[3] INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMES [J]. APPLIED PHYSICS LETTERS, 1964, 4 (02) : 32 - &

[4] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[5] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .2. HIGHER ORDER CORRECTIONS [J]. PHYSICAL REVIEW, 1967, 153 (03): : 802 - +

[6] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &

[7] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[8] ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3720 - &

[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[10] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5139 - &

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY H

[3] INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMES [J]. APPLIED PHYSICS LETTERS, 1964, 4 (02) : 32 - &

[4] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J]. PHYSICAL REVIEW, 1966, 148 (02): : 722 - +

[5] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .2. HIGHER ORDER CORRECTIONS [J]. PHYSICAL REVIEW, 1967, 153 (03): : 802 - +

[6] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &

[7] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 79 - &

[8] ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3720 - &

[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &

[10] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) : 5139 - &