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PREPARATION AND PROPERTIES OF BULK IN1-XGAXAS ALLOYS
被引:39
作者
:
WAGNER, JW
论文数:
0
引用数:
0
h-index:
0
WAGNER, JW
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1970年
/ 117卷
/ 09期
关键词
:
D O I
:
10.1149/1.2407767
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1193 / &
相关论文
共 17 条
[1]
THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BRAUNSTEIN, R
论文数:
0
引用数:
0
h-index:
0
BRAUNSTEIN, R
;
ROSI, FD
论文数:
0
引用数:
0
h-index:
0
ROSI, FD
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
10
(2-3)
:204
-210
[2]
PREPARATION OF EPITAXIAL GAXIN1-XAS
[J].
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
;
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
;
MARTIN, DD
论文数:
0
引用数:
0
h-index:
0
MARTIN, DD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
:164
-&
[3]
GREMMELMAIER R, 1956, Z NATURFORSCH PT A, V11, P511
[4]
THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS
[J].
HOCKINGS, EF
论文数:
0
引用数:
0
h-index:
0
HOCKINGS, EF
;
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
;
SEIDEL, TE
论文数:
0
引用数:
0
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SEIDEL, TE
;
SCHMELZ, CM
论文数:
0
引用数:
0
h-index:
0
SCHMELZ, CM
;
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
STEIGMEIER, EF
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
:2879
-+
[5]
SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS
[J].
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
;
STRAUSS, AJ
论文数:
0
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STRAUSS, AJ
;
REDIKER, RH
论文数:
0
引用数:
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0
REDIKER, RH
.
PROCEEDINGS OF THE IEEE,
1963,
51
(08)
:1154
-&
[6]
TECHNIQUE FOR PULLING SINGLE CRYSTALS OF VOLATILE MATERIALS
[J].
METZ, EPA
论文数:
0
引用数:
0
h-index:
0
METZ, EPA
;
MAZELSKY, R
论文数:
0
引用数:
0
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0
MAZELSKY, R
;
MILLER, RC
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0
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MILLER, RC
.
JOURNAL OF APPLIED PHYSICS,
1962,
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(06)
:2016
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[7]
PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS
[J].
MINDEN, HT
论文数:
0
引用数:
0
h-index:
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MINDEN, HT
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
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112
(03)
:300
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[8]
MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION
[J].
MULLER, EK
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0
引用数:
0
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0
MULLER, EK
;
RICHARDS, JL
论文数:
0
引用数:
0
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RICHARDS, JL
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(04)
:1233
-&
[9]
LIQUID ENCAPSULATION TECHNIQUES - USE OF AN INERT LIQUID IN SUPPRESSING DISSOCIATION DURING MELT-GROWTH OF INAS AND GAAS CRYSTALS
[J].
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
STRAUGHAN, BW
论文数:
0
引用数:
0
h-index:
0
STRAUGHAN, BW
;
BRICKELL, WS
论文数:
0
引用数:
0
h-index:
0
BRICKELL, WS
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(04)
:782
-+
[10]
GROWTH OF (GA+IN1-+)AS SINGLE CRYSTALS BY VAPOR PHASE REACTION
[J].
SIRRINE, R
论文数:
0
引用数:
0
h-index:
0
SIRRINE, R
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
:750
-751
←
1
2
→
共 17 条
[1]
THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS
[J].
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
;
BRAUNSTEIN, R
论文数:
0
引用数:
0
h-index:
0
BRAUNSTEIN, R
;
ROSI, FD
论文数:
0
引用数:
0
h-index:
0
ROSI, FD
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1959,
10
(2-3)
:204
-210
[2]
PREPARATION OF EPITAXIAL GAXIN1-XAS
[J].
CONRAD, RW
论文数:
0
引用数:
0
h-index:
0
CONRAD, RW
;
HOYT, PL
论文数:
0
引用数:
0
h-index:
0
HOYT, PL
;
MARTIN, DD
论文数:
0
引用数:
0
h-index:
0
MARTIN, DD
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(2P1)
:164
-&
[3]
GREMMELMAIER R, 1956, Z NATURFORSCH PT A, V11, P511
[4]
THERMAL AND ELECTRICAL TRANSPORT IN INAS-GAAS ALLOYS
[J].
HOCKINGS, EF
论文数:
0
引用数:
0
h-index:
0
HOCKINGS, EF
;
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
;
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
SEIDEL, TE
;
SCHMELZ, CM
论文数:
0
引用数:
0
h-index:
0
SCHMELZ, CM
;
STEIGMEIER, EF
论文数:
0
引用数:
0
h-index:
0
STEIGMEIER, EF
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(07)
:2879
-+
[5]
SEMICONDUCTOR DIODE MASERS IN (INXGA1-X)AS
[J].
MELNGAILIS, I
论文数:
0
引用数:
0
h-index:
0
MELNGAILIS, I
;
STRAUSS, AJ
论文数:
0
引用数:
0
h-index:
0
STRAUSS, AJ
;
REDIKER, RH
论文数:
0
引用数:
0
h-index:
0
REDIKER, RH
.
PROCEEDINGS OF THE IEEE,
1963,
51
(08)
:1154
-&
[6]
TECHNIQUE FOR PULLING SINGLE CRYSTALS OF VOLATILE MATERIALS
[J].
METZ, EPA
论文数:
0
引用数:
0
h-index:
0
METZ, EPA
;
MAZELSKY, R
论文数:
0
引用数:
0
h-index:
0
MAZELSKY, R
;
MILLER, RC
论文数:
0
引用数:
0
h-index:
0
MILLER, RC
.
JOURNAL OF APPLIED PHYSICS,
1962,
33
(06)
:2016
-+
[7]
PREPARATION AND PROPERTIES OF GAAS-INAS MIXED CRYSTALS
[J].
MINDEN, HT
论文数:
0
引用数:
0
h-index:
0
MINDEN, HT
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
:300
-&
[8]
MISCIBILITY OF 3-V SEMICONDUCTORS STUDIED BY FLASH EVAPORATION
[J].
MULLER, EK
论文数:
0
引用数:
0
h-index:
0
MULLER, EK
;
RICHARDS, JL
论文数:
0
引用数:
0
h-index:
0
RICHARDS, JL
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(04)
:1233
-&
[9]
LIQUID ENCAPSULATION TECHNIQUES - USE OF AN INERT LIQUID IN SUPPRESSING DISSOCIATION DURING MELT-GROWTH OF INAS AND GAAS CRYSTALS
[J].
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
MULLIN, JB
;
STRAUGHAN, BW
论文数:
0
引用数:
0
h-index:
0
STRAUGHAN, BW
;
BRICKELL, WS
论文数:
0
引用数:
0
h-index:
0
BRICKELL, WS
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(04)
:782
-+
[10]
GROWTH OF (GA+IN1-+)AS SINGLE CRYSTALS BY VAPOR PHASE REACTION
[J].
SIRRINE, R
论文数:
0
引用数:
0
h-index:
0
SIRRINE, R
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(06)
:750
-751
←
1
2
→