共 50 条
[31]
Turbostractic boron nitride produced by ion bombardment
[J].
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,
2000, 24 (11)
:1055-1059
[34]
CONVERSION OF TYPE OF CONDUCTION STIMULATED BY ION-BOMBARDMENT OF SILICON-DOPED GAAS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1976, 10 (01)
:99-99
[36]
INVESTIGATION OF KINETICS OF NEGATIVE ANNEALING OF SILICON FILMS DOPED WITH BORON IONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1973, 7 (04)
:508-509
[37]
The investigation of boron-doped silicon using atom probe tomography
[J].
PROCEEDINGS OF THE 11TH EUROPEAN WORKSHOP OF THE EUROPEAN-MICROBEAM-ANALYSIS-SOCIETY (EMAS) ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS,
2010, 7
[39]
Ion bombardment and disorder in amorphous silicon
[J].
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997,
1997, 467
:597-602