共 50 条
[1]
INVESTIGATION OF DIFFUSION OF BORON IN SILICON FROM A LAYER DOPED BY ION BOMBARDMENT
[J].
SOVIET PHYSICS SOLID STATE,USSR,
1967, 8 (09)
:2221-&
[2]
INFLUENCE OF AMORPHIZATION ON DISTRIBUTION OF BORON INTRODUCED INTO SILICON BY ION-BOMBARDMENT
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1974, 7 (10)
:1325-1327
[3]
HALL-EFFECT INVESTIGATION OF ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY BOMBARDMENT WITH BORON IONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1974, 8 (05)
:656-657
[4]
DISTRIBUTION OF IMPLANTED ATOMS AND RADIATION DEFECTS IN ION BOMBARDMENT OF SILICON (MONTE CARLO CALCULATION METHOD)
[J].
SOVIET PHYSICS SOLID STATE,USSR,
1967, 8 (09)
:2141-+
[6]
Reaction Between Iron and Boron Introduced into Silicon by Ion Bombardment.
[J].
1978, 14 (04)
:610-613
[7]
ANGULAR-DISTRIBUTION INVESTIGATION OF SPUTTERED ATOMS OF METAL BY LOW-ENERGY ION-BOMBARDMENT
[J].
IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK,
1977, (02)
:107-110
[8]
ANOMALOUS DIFFUSION OF BORON IN SILICON DUE TO HEAVY-ION BOMBARDMENT
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1986, 94 (01)
:357-363
[9]
CONDUCTIVITY AND CARRIER DENSITY DISTRIBUTIONS IN SILICON DOPED BY ION BOMBARDMENT
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1968, 2 (06)
:656-+
[10]
AN INVESTIGATION OF THE DISTRIBUTION OF BORON ATOMS IN THE AGGREGATE CRYSTALS OF DIAMOND CONTAINING BORON
[J].
PHYSICA B & C,
1986, 139 (1-3)
:654-657