IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS

被引：14
作者：
KUDOH, O [1 ]
NAKAMURA, K [1 ]
KAMOSHID.M [1 ]
机构：
[1] NIPPON ELECT CO LTD,IC DIV,1753 SHIMONUMABE,KAWASAKI 211,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期
关键词：
D O I：
10.1063/1.1663080
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4514 / 4519
页数：6
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