IMPLANT DOSE PROFILE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED MOS-TRANSISTORS

被引：14

作者：

KUDOH, O ^{[1
]}

NAKAMURA, K ^{[1
]}

KAMOSHID.M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,IC DIV,1753 SHIMONUMABE,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.1663080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4514 / 4519

页数：6

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