ANODIC OXIDE FILM AS GATE INSULATOR FOR INP MOSFETS

被引：21

作者：

YAMAMOTO, A

UEMURA, C

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 02期

关键词：

D O I：

10.1049/el:19820044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：63 / 64

页数：2

共 9 条

[1] INP-AL2O3 N-CHANNEL INVERSION-MODE MOSFETS USING SULFUR-DIFFUSED SOURCE AND DRAIN [J].

KAWAKAMI, T ;

OKAMURA, M .

ELECTRONICS LETTERS, 1979, 15 (16) :502-504

[2]

KOBAYASHI T, UNPUB J APPL PHYS

[3] N-CHANNEL INVERSION-MODE INP MISFET [J].

LILE, DL ;

COLLINS, DA ;

MEINERS, LG ;

MESSICK, L .

ELECTRONICS LETTERS, 1978, 14 (20) :657-659

[4] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[5] REDUCTION OF INTERFACE STATES AND FABRICATION OF P-CHANNEL INVERSION-TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L599-L602

[6] INTERFACE CHARACTERISTICS OF INP MOS CAPACITORS [J].

PANDE, KP ;

ROBERTS, GG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1470-1473

[7] THERMAL-OXIDATION OF INP [J].

WAGER, JF ;

WILMSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :812-814

[8] THERMAL NITRIDATION OF INP [J].

YAMAGUCHI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L401-L404

[9]

YAMAMOTO A, UNPUB

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