APPLICATION OF OXIDE MASKING TO SILICON DIFFUSED TRANSISTORS

被引：0

|

作者：

LANZL, RH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C62 / C62

页数：1

相关论文

共 50 条

[21] TEMPERATURE-DEPENDENCE OF FT OF SILICON DOUBLE-DIFFUSED BIPOLAR-TRANSISTORS
OOSAKA, F
SOLID-STATE ELECTRONICS, 1978, 21 (04) : 665 - 666
[22] USE OF DOPED ANODIC OXIDE FILMS ON SILICON FOR PRODUCING DIFFUSED JUNCTIONS
SCHMIDT, PF
OWEN, AE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : C53 - C53
[23] Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors
Liang, CW
Luo, TC
Feng, MS
Cheng, HC
Su, D
MATERIALS CHEMISTRY AND PHYSICS, 1996, 43 (02) : 166 - 172
[24] A DELETERIOUS VAPOR TRANSPORT OF SILICON OXIDE IN PROCESSING OF SILICON PLANAR TRANSISTORS
LYON, DH
LINDHOLM, DW
LEWIS, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C100 - &
[25] EMITTER DIP EFFECT IN DOUBLE-DIFFUSED N-P-N SILICON TRANSISTORS
MAEDA, M
TANIMOTO, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 16 (01): : 273 - 278
[26] A SIMPLE AND FLEXIBLE METHOD OF FABRICATING DIFFUSED N-P-N SILICON POWER TRANSISTORS
ARMSTRONG, LD
HARMON, HD
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (03): : 462 - 462
[27] DOUBLE DIFFUSED GALLIUM ARSENIDE TRANSISTORS
BECKE, H
FLATLEY, D
STOLNITZ, D
SOLID-STATE ELECTRONICS, 1965, 8 (03) : 255 - &
[28] GERMANIUM DIFFUSED MINICRYSTALS AND THEIR USE IN TRANSISTORS
LESK, IA
COFFMAN, RE
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1493 - 1494
[29] HIGH FREQUENCY BREAKDOWN IN DIFFUSED TRANSISTORS
CHOMA, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 347 - &
[30] DOUBLE-DIFFUSED MOS TRANSISTORS
HARRIS, RE
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 415 - &

← 1 2 3 4 5 →