HIGH-POWER SINGLEMODE GAINAS LASERS WITH DISTRIBUTED BRAGG REFLECTORS

被引：15
作者：
OBRIEN, S
PARKE, R
WELCH, DF
MEHUYS, D
SCIFRES, D
机构：
[1] Spectra Diode Laboratories, San Jose, CA 95134
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 13期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920805
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 m W with single longitudinal and transverse mode operation at 971.9 nm up to 42 m W.
引用
收藏
页码：1272 / 1273
页数：2
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