MOLECULAR-BEAM EPITAXY GROWTH OF GAAS/ALAS DOUBLE-BARRIER RESONANT TUNNELING DEVICES ON (311)A SUBSTRATES

被引：16

作者：

HENINI, M ^{[1
]}

HAYDEN, RK ^{[1
]}

VALADARES, EC ^{[1
]}

EAVES, L ^{[1
]}

HILL, G ^{[1
]}

PATE, MA ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 4DU,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 02期

关键词：

D O I：

10.1088/0268-1242/7/2/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate resonant tunnelling in p-type silicon-doped GaAs/AlAs double-barrier quantum well structures grown by molecular beam epitaxy on the (311)A GaAs surface. Their current-voltage characteristics compare favourably with structures grown on the conventional (100) orientation using beryllium as the acceptor.

引用

页码：267 / 270

页数：4

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