EXCESS ULTRASONIC-ATTENUATION IN AS2S3 GLASS AFTER ELECTRIC-FIELD REMOVAL

被引：10

作者：

CLAYTOR, TN ^{[1
]}

SLADEK, RJ ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.42.1482

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Increased ultrasonic attenuation is found in As2S3 glass at 4.2 K after removal of a high electric field. The extra attenuation persists for a few minutes before disappearing, but can be reduced, or practically eliminated, by infrared radiation of moderate intensities. The effect is attributed to atomic relaxation accompanying electronic transitions in gap states where injected carriers have been trapped. The gap states may be valence-alternation pairs. © 1979 The American Physical Society.

引用

页码：1482 / 1485

页数：4

共 14 条

[1]

Anderson P. W., 1971, PHILOS MAG, V25, P1

[2] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].