CHARACTERIZATION OF PHOTOCHEMICALLY UNPINNED GAAS

被引：52

作者：

WILMSEN, CW

KIRCHNER, PD

BAKER, JM

MCINTURFF, DT

PETTIT, GD

WOODALL, JM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1180 / 1183

页数：4

共 11 条

[1] PICOSECOND TRANSIENT REFLECTIVITY OF UNPINNED GALLIUM-ARSENIDE (100) SURFACES [J].

BECK, SM ;

WESSEL, JE .

APPLIED PHYSICS LETTERS, 1987, 50 (03) :149-151

[2]

GUDOT W, 1976, J VAC SCI TECHNOL, V13, P831

[3] UNPINNING OF THE FERMI LEVEL ON GAAS BY FLOWING WATER [J].

IVES, NA ;

STUPIAN, GW ;

LEUNG, MS .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :256-258

[4]

KIRCHNER PD, IN PRESS J ELECTROCH

[5] REPRODUCIBLE SULFUR DIFFUSION INTO GAAS [J].

MATINO, H .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :35-&

[6] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY [J].

OFFSEY, SD ;

WOODALL, JM ;

WARREN, AC ;

KIRCHNER, PD ;

CHAPPELL, TI ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :475-477

[7] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[8] EFFECTS OF PASSIVATING IONIC FILMS ON THE PHOTOLUMINESCENCE PROPERTIES OF GAAS [J].

SKROMME, BJ ;

SANDROFF, CJ ;

YABLONOVITCH, E ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2022-2024

[9]

SPICER WE, 1980, J VAC SCI TECHNOL, V17, P1010

[10] GAAS OXIDATION AND THE GA-AS-O EQUILIBRIUM PHASE-DIAGRAM [J].

THURMOND, CD ;

SCHWARTZ, GP ;

KAMMLOTT, GW ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1366-1371

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