ELECTRICAL CHARACTERISTICS OF MOSFET UTILIZING OXYGEN ARGON SPUTTER-DEPOSITED GATE OXIDE-FILMS

被引：26

作者：

SUYAMA, S

OKAMOTO, A

SERIKAWA, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期

关键词：

D O I：

10.1109/T-ED.1987.23206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2124 / 2128

页数：5

相关论文

共 11 条

[1] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P260
[2] EXPERIMENTAL RESULTS ON SUBMICRON-SIZE P-CHANNEL MOSFETS
FICHTNER, W
LEVIN, RM
TAYLOR, GW
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 34 - 37
[3] MOS DEVICE FABRICATION USING SPUTTER-DEPOSITED GATE OXIDE AND POLYCRYSTALLINE SILICON LAYERS
HABERLE, K
FROSCHLE, E
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (08) : 855 - +
[4] JOHANSEN IT, 1966, J APPL PHYS, V37, P479
[5] DEVICE-QUALITY SIO2-FILMS ON INP AND SI OBTAINED BY OPERATING THE PYROLYTIC CVD REACTOR IN THE RETARDATION REGIME
LAKHANI, AA
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (10) : 921 - 924
[6] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
GROVE, AS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) : 248 - +
[7] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS
PLISKIN, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081
[8] CLEANING OF SI AND GAAS CRYSTAL-SURFACES BY ION-BOMBARDMENT IN THE 50-1500 EV RANGE - INFLUENCE OF BOMBARDING ENERGY AND SAMPLE TEMPERATURE ON DAMAGE AND INCORPORATION
RABINZOHN, P
GAUTHERIN, G
AGIUS, B
COHEN, C
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) : 905 - 914
[9] SUYAMA S, IN PRESS J ELECTROCH
[10] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9