A PHYSICAL MODEL OF FLOATING BODY THIN-FILM SILICON-ON-INSULATOR NMOSFET WITH PARASITIC BIPOLAR-TRANSISTOR

被引：28
作者：
YU, HK [1 ]
LYU, JS [1 ]
KANG, SW [1 ]
KIM, CK [1 ]
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,TAEJON 305701,SOUTH KOREA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 05期
关键词：
D O I：
10.1109/16.285024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model for SOI nMOSFET with a floating body is developed to describe the I(ds)-V(ds) characteristics. Considering all current components in MOSFET as well as parasitic BJT, this study evaluates body potential, investigates the correlations among many device parameters, and characterizes the various phenomena in floating body: threshold voltage reduction, kink effect, output conductance increment, and breakdown voltage reduction. This study also provides a good physical insight on the role of the parasitic current components in the overall device operation. Our model explains the dependence of the channel length on the I(ds)-V(ds) characteristics with parasitic BJT current gain. Results obtained from this model are in good agreement with the experimental I(ds)-V(ds) curves for various bias and geometry conditions.
引用
收藏
页码：726 / 733
页数：8
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