DEFECT RELAXATION IN HYDROGENATED AMORPHOUS-SILICON

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2645 - 2665

[3] CRANDALL RS, 1989, IN PRESS MAT RES SOC, V149

[4] LIGHT-INDUCED PERTURBATION OF THE HIGH-TEMPERATURE EQUILIBRIUM IN PHOSPHORUS-DOPED A-SI-H [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9378 - 9380

[5] ELIOT SR, 1979, PHILOS MAG B, V39, P349

[6] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 50 - 51

[7] CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3595 - 3598

[8] LIGHT-INDUCED EFFECTS AND THEIR ANNEALING BEHAVIOR IN A-SI-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L654 - L656

[9] EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 412 - 414

[10] PANKOVE J, 1980, APPL PHYS LETT, V38, P456

[1] ORIGIN OF THE PHOTOINDUCED CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J]. SOLAR CELLS, 1983, 9 (1-2): : 133 - 148

[2] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2645 - 2665

[3] CRANDALL RS, 1989, IN PRESS MAT RES SOC, V149

[4] LIGHT-INDUCED PERTURBATION OF THE HIGH-TEMPERATURE EQUILIBRIUM IN PHOSPHORUS-DOPED A-SI-H [J]. PHYSICAL REVIEW B, 1987, 36 (17): : 9378 - 9380

[5] ELIOT SR, 1979, PHILOS MAG B, V39, P349

[6] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 50 - 51

[7] CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT [J]. PHYSICAL REVIEW B, 1988, 38 (05): : 3595 - 3598

[8] LIGHT-INDUCED EFFECTS AND THEIR ANNEALING BEHAVIOR IN A-SI-H [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L654 - L656

[9] EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1987, 51 (06) : 412 - 414

[10] PANKOVE J, 1980, APPL PHYS LETT, V38, P456