THE EVOLUTION OF SI/SIO2 INTERFACE ROUGHNESS

被引：92

作者：

CARIM, AH

SINCLAIR, R

机构：

[1] Stanford Univ, Stanford, CA, USA, Stanford Univ, Stanford, CA, USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100544

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：741 / 746

页数：6

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