2 TYPES OF DRIFT MOBILITIES IN AMORPHOUS SE-BI AND SE-AS-TE-BI SYSTEMS

被引:23
作者
TAKAHASHI, T [1 ]
机构
[1] UNIV TOKYO,COLL GEN EDUC,DEPT CHEM,TOKYO 153,JAPAN
关键词
D O I
10.1016/0022-3093(81)90026-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:239 / 247
页数:9
相关论文
共 16 条
[1]   ELECTRONEGATIVITY VALUES FROM THERMOCHEMICAL DATA [J].
ALLRED, AL .
JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1961, 17 (3-4) :215-221
[2]   X-RAY PHOTOELECTRON-SPECTRA AND ELECTRONIC-STRUCTURE OF BI2X3 (X=O,S,SE,TE) [J].
DEBIES, TP ;
RABALAIS, JW .
CHEMICAL PHYSICS, 1977, 20 (02) :277-283
[3]   CHEMICAL BONDING IN BISMUTH TELLURIDE [J].
DRABBLE, JR ;
GOODMAN, CHL .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144
[4]   ELECTRICAL PROPERTIES OF LIQUID SELENIUM-I [J].
HENKELS, HW ;
MACZUK, J .
JOURNAL OF APPLIED PHYSICS, 1953, 24 (08) :1056-1060
[5]   THERMALLY INDUCED EFFECTS IN AMORPHOUS GESE2 AND GESE FILMS STUDIED BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY [J].
HINO, S ;
TAKAHASHI, T ;
HARADA, Y .
SOLID STATE COMMUNICATIONS, 1980, 35 (04) :379-382
[6]  
Lucovsky G., 1972, J NONCRYST SOLIDS, V8-10, P185, DOI 10.1016/0022-3093(72)90134-2
[7]   THE CRYSTAL STRUCTURE AND PROPERTIES OF THE GROUP-VB TO GROUP-VIIB ELEMENTS AND OF COMPOUNDS FORMED BETWEEN THEM [J].
MOOSER, E ;
PEARSON, WB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 7 (01) :65-77
[8]  
Mott N. F., 1979, ELECT PROCESSES NONC
[9]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[10]   DEFECTS IN CHALCOGENIDE GLASSES .2. EFFECT OF METALLIC IMPURITIES ON THE TRANSPORT-PROPERTIES OF A-AS2SE3 [J].
PFISTER, G ;
MORGAN, M .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (02) :209-234