DC AND RF PERFORMANCE OF 0.15-MU-M GATE LENGTH IN0.70AL0.30AS/IN0.80GA0.20AS HFETS ON GAAS SUBSTRATE

被引:9
作者
RORSMAN, N [1 ]
KARLSSON, C [1 ]
WANG, SM [1 ]
ZIRATH, H [1 ]
ANDERSSON, TG [1 ]
机构
[1] CHALMERS UNIV TECHNOL, DEPT PHYS, S-41296 GOTHENBURG, SWEDEN
关键词
FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICE CHARACTERIZATION;
D O I
10.1049/el:19950839
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors have studied the DC and microwave characteristics of 0.15 mu m gate length In0.70Al0.30As/In0.80Ga0.20As heterostructure field-effect transistors (HFETs) on GaAs substrate. A graded InAlGaAs buffer is used to accommodate the large lattice mismatch between the substrate and the channel. An intrinsic transit frequency of 140GHz and a maximum frequency of oscillation of 200GHz were obtained, which is the highest reported f(max) for an InAlAs/InGaAs HFET lattice-mismatched on GaAs substrate.
引用
收藏
页码:1292 / 1294
页数:3
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