678-MV OPEN-CIRCUIT VOLTAGE SILICON SOLAR-CELLS

被引：24

作者：

BLAKERS, AW

GREEN, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.92767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：483 / 485

页数：3

共 17 条

[1]

BLAKERS AW, 1981, 5TH INT ION BEAM AN

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J].

DZIEWIOR, J ;

SILBER, D .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :170-172

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[4] IMPORTANCE OF SURFACE RECOMBINATION AND ENERGY-BANDGAP NARROWING IN P-N-JUNCTION SILICON SOLAR-CELLS [J].

FOSSUM, JG ;

LINDHOLM, FA ;

SHIBIB, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1294-1298

[5] PHYSICS UNDERLYING THE PERFORMANCE OF BACK-SURFACE-FIELD SOLAR-CELLS [J].

FOSSUM, JG ;

NASBY, RD ;

PAO, SC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) :785-791

[6] 655-MV OPEN-CIRCUIT VOLTAGE, 17.6-PERCENT EFFICIENT SILICON MIS SOLAR-CELLS [J].

GODFREY, RB ;

GREEN, MA .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :790-793

[7]

Green M. A., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P684

[8] EFFECTS OF PINHOLES, OXIDE TRAPS, AND SURFACE-STATES ON MIS SOLAR-CELLS [J].

GREEN, MA .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :178-180

[9] SURFACE PASSIVATION OF INVERSION LAYER MIS SOLAR-CELLS [J].

LAM, YW ;

GREEN, MA ;

DAVIES, LW .

ELECTRONICS LETTERS, 1980, 16 (18) :707-708

[10] ELECTROSTATIC EFFECTS IN INVERSION-LAYER METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J].

LAM, YW ;

GREEN, MA ;

DAVIES, LW .

APPLIED PHYSICS LETTERS, 1980, 37 (12) :1087-1089

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