THE ELECTRICAL-PROPERTIES OF SEMICONDUCTOR-METAL, SEMICONDUCTOR LIQUID, AND SEMICONDUCTOR CONDUCTING POLYMER CONTACTS

被引：36
|
作者：
KUMAR, A
WILISCH, WCA
LEWIS, NS
机构：
[1] Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, CA
来源：
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1993年 / 18卷 / 04期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTOR; SEMICONDUCTOR METAL JUNCTION; SEMICONDUCTOR LIQUID JUNCTION; SEMICONDUCTOR CONDUCTING POLYMER JUNCTION; FERMI LEVEL; FERMI LEVEL PINNING; SI; GAAS; INP; CDS; CDSE; CDTE;
D O I：
10.1080/10408439308243731
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.
引用
收藏
页码：327 / 353
页数：27
相关论文
共 50 条
  • [1] THE SEMICONDUCTOR-METAL TRANSITION IN LIQUID SEMICONDUCTORS
    ALEKSEEV, VA
    ANDREEV, AA
    SADOVSKII, MV
    USPEKHI FIZICHESKIKH NAUK, 1980, 132 (01): : 47 - 90
  • [2] THE SEMICONDUCTOR-METAL TRANSITION IN LIQUID TELLURIUM
    PROKHORENKO, VY
    SOKOLOVSKII, BI
    ALEKSEEV, VA
    BASIN, AS
    STANKUS, SV
    SKLYARCHUK, VM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 113 (02): : 453 - 458
  • [3] ELECTRICAL-PROPERTIES OF SEMICONDUCTOR SURFACES
    KOHL, CD
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (03): : 127 - 145
  • [4] SEMICONDUCTOR ELECTRICAL-PROPERTIES MEASUREMENT
    HURAULT, JP
    ACTA ELECTRONICA, 1983, 25 (02): : 101 - 102
  • [5] DISTINGUISHING BETWEEN BURIED SEMICONDUCTOR-METAL CONTACTS AND HYBRID SEMICONDUCTOR-METAL LIQUID CONTACTS AT N-GAAS/KOH-SE/-2-(AQ) JUNCTIONS
    BANSAL, A
    TAN, MX
    TUFTS, BJ
    LEWIS, NS
    JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (28): : 7309 - 7315
  • [6] SEMICONDUCTOR-METAL INTERFACES
    WILLIAMS, RH
    PHYSICA SCRIPTA, 1989, T29 : 209 - 212
  • [7] The covalent theory of semiconductor. Semiconductor-metal transition
    Mitsek, OI
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2001, 23 (01): : 1 - 25
  • [8] POSSIBILITY OF A SEMICONDUCTOR-METAL TRANSITION IN A COMPLETELY COMPENSATED SEMICONDUCTOR
    MARINENKO, SM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 837 - 838
  • [9] ELECTRICAL-PROPERTIES OF AN UNUSUAL LIQUID SEMICONDUCTOR - K-TE
    FORTNER, J
    SABOUNGI, ML
    ENDERBY, JE
    PHILOSOPHICAL MAGAZINE LETTERS, 1993, 68 (02) : 85 - 91
  • [10] RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS
    BORNEMAN, EH
    SCHWARZ, RF
    STICKLER, JJ
    JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) : 1021 - 1028
12345