THE INTERACTION OF ATOMIC DEUTERIUM WITH SULFUR PASSIVATED INP(100)-(1X1)

被引：6

作者：

ANDERSON, GW

HANF, MC

SHAPTER, JG

NORTON, PR

LU, ZH

GRAHAM, MJ

机构：

[1] UNIV WESTERN ONTARIO,DEPT CHEM,LONDON N6A 5B7,ONTARIO,CANADA

[2] NATL RES COUNCIL CANADA,INST MICROSTRUCTURAL SCI,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

SURFACE SCIENCE | 1994年 / 318卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)90104-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

S-passivated InP (100) crystals have been exposed, at various temperatures, to atomic deuterium. The sulphur overlayer is found to be removed by this treatment, with all of the sulphur being removed at sufficiently high exposures. Samples which are dosed at 300 or 400 K yield a D-terminated (1 x 1) surface, while those exposed at temperatures > 500 K exhibit a (4 x 2) reconstruction. The surface morphologies of the samples dosed at 300 and 400 K are unchanged from that of the original wafer, while those treated at higher temperatures show the presence of macroscopic In islands.

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收藏

页码：299 / 306

页数：8

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