TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE OF MODIFIED INPSN CRYSTALS

被引：0

作者：

DZHUMAMUKHAMBETOV, NG

DMITRIEV, AG

机构：

来源：

SEMICONDUCTORS | 1993年 / 27卷 / 04期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence (in the range 77-300 K) of the photoluminescence spectra of InP:Sn crystals modified by laser radiation has been studied. A band with a maximum at 1.35 eV, exhibited by the modified crystals, is attributable to radiative recombination via density-of-states tails, which appeared as a result of random distribution of defects and impurities after the laser treatment.

引用

页码：356 / 357

页数：2