ALINAS/GAINAS HEMT APPLICATION FOR HIGH-PERFORMANCE OEIC RECEIVERS

被引：1
作者：
WADA, O
NOBUHARA, H
MAKIUCHI, M
HAMAGUCHI, H
SASA, S
FUJII, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90423-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：378 / 381
页数：4
相关论文
共 50 条
[41]   TRANSMITTERS AND RECEIVERS MUST DELIVER HIGH-PERFORMANCE [J].
JUNGBLUTH, ED .
LASER FOCUS WORLD, 1991, 27 (07) :167-&
[42]   Engineering in AlInAs/GaInAs HEMTs for high f(tau) and f(max) [J].
Migliore, E ;
Chavarkar, P ;
Yen, J ;
Mishra, UK ;
Fischetti, MV ;
Laux, SE .
1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1997, :400-403
[43]   GaN HEMT for High-performance Applications: A Revolutionary Technology [J].
Pattnaik, Geeta ;
Mohapatra, Meryleen .
RECENT ADVANCES IN ELECTRICAL & ELECTRONIC ENGINEERING, 2024, 17 (08) :737-762
[44]   HIGH-POWER V-BAND ALINAS/GAINAS ON INP HEMTS [J].
MATLOUBIAN, M ;
BROWN, AS ;
NGUYEN, LD ;
MELENDES, MA ;
LARSON, LE ;
DELANEY, MJ ;
PENCE, JE ;
RHODES, RA ;
THOMPSON, MA ;
HENIGE, JA .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (04) :188-189
[45]   HIGH-THRESHOLD UNIFORMITY, MILLIMETER-WAVE P(+)-GAINAS/N-ALINAS/GAINAS JHEMTS [J].
SHEALY, JB ;
LIU, TY ;
THOMPSON, MA ;
WILSON, RG ;
NGUYEN, LD ;
MISHRA, UK .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) :560-562
[46]   HIGH-SENSITIVITY HALL SENSORS USING GAINAS/ALINAS PSEUDOMORPHIC HETEROSTRUCTURES [J].
DELMEDICO, S ;
BENYATTOU, T ;
GUILLOT, G ;
GENDRY, M ;
OUSTRIC, M ;
VENET, T ;
TARDY, J ;
HOLLINGER, G ;
CHOVET, A ;
MATHIEU, N .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 46 (1-3) :298-301
[47]   HIGH-PERFORMANCE, HIGH-RELIABILITY INP/GAINAS P-I-N PHOTODIODES AND FLIP-CHIP INTEGRATED RECEIVERS FOR LIGHTWAVE COMMUNICATIONS [J].
WADA, O ;
MAKIUCHI, M ;
HAMAGUCHI, H ;
KUMAI, T ;
MIKAWA, T .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1991, 9 (09) :1200-1207
[48]   VERTICAL SCALING OF ULTRA-HIGH-SPEED ALINAS-GAINAS HEMTS [J].
NGUYEN, L ;
BROWN, A ;
DELANEY, M ;
MISHRA, U ;
LARSON, L ;
JELLOIAN, L ;
MELENDES, M ;
HOOPER, C ;
THOMPSON, M .
1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, :105-108
[49]   NUMERICAL AND EXPERIMENTAL STUDIES OF THE INTRINSIC PERFORMANCE OF ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
KING, HXL ;
WOO, JCS ;
JENSEN, JF ;
STANCHINA, WE ;
FERRO, RJ ;
METZGER, RA .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :4426-4430
[50]   Design of high-performance photodiode receivers for optical tomography [J].
Wright, P ;
Ozanyan, KB ;
Carey, SJ ;
McCann, H .
IEEE SENSORS JOURNAL, 2005, 5 (02) :281-288
12345