ALINAS/GAINAS HEMT APPLICATION FOR HIGH-PERFORMANCE OEIC RECEIVERS

被引：1
|
作者：
WADA, O
NOBUHARA, H
MAKIUCHI, M
HAMAGUCHI, H
SASA, S
FUJII, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(89)90423-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：378 / 381
页数：4
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