RAPID-THERMAL NITRIDATION OF SIO2 FOR RADIATION-HARDENED MOS GATE DIELECTRICS

被引：20

作者：

SUNDARESAN, R

MATLOUBIAN, MM

BAILEY, WE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1223 / 1227

页数：5

共 10 条

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