POST-ANODIZATION FILTERED ILLUMINATION OF POROUS SILICON IN HF SOLUTIONS - AN EFFECTIVE METHOD TO IMPROVE LUMINESCENCE PROPERTIES

被引：34

作者：

KOYAMA, H

NAKAGAWA, T

OZAKI, T

KOSHIDA, N

机构：

[1] Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 13期

关键词：

D O I：

10.1063/1.112946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A useful method is presented to improve the luminescence efficiency of porous silicon (PS) based on the post-anodization illumination of samples in HF solutions. In the present method the illumination is performed by a white lamp through sharp-cut long-wavelength-pass filters to remove the short wavelength component from the illumination light. The PS samples prepared by this method exhibited the visible photoluminescence (PL) with an efficiency of one order of magnitude higher than those illuminated without filters. The efficiency improvement is attributed to the reduction of the deteriorative surface oxidation of Si crystallites in PS. The filtered illumination technique is also useful to produce a larger PL blue shift and precise control of PL spectra.

引用

页码：1656 / 1658

页数：3

共 29 条

[1] EFFECTS OF LIGHT EXPOSURE DURING ANODIZATION ON PHOTOLUMINESCENCE OF POROUS SI [J].

ASANO, T ;

HIGA, K ;

AOKI, S ;

TONOUCHI, M ;

MIYASATO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4A) :L373-L375

[2] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].

BRANDT, MS ;

FUCHS, HD ;

STUTZMANN, M ;

WEBER, J ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1992, 81 (04) :307-312

[3] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].

BSIESY, A ;

VIAL, JC ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

ROMESTAIN, R ;

WASIELA, A ;

HALIMAOUI, A ;

BOMCHIL, G .

SURFACE SCIENCE, 1991, 254 (1-3) :195-200

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] PHOTOINDUCED HYDROGEN LOSS FROM POROUS SILICON [J].

COLLINS, RT ;

TISCHLER, MA ;

STATHIS, JH .

APPLIED PHYSICS LETTERS, 1992, 61 (14) :1649-1651

[6] MICROSCOPIC STRUCTURE OF THE SIO2/SI INTERFACE [J].

HIMPSEL, FJ ;

MCFEELY, FR ;

TALEBIBRAHIMI, A ;

YARMOFF, JA ;

HOLLINGER, G .

PHYSICAL REVIEW B, 1988, 38 (09) :6084-6096

[7] LIGHT-EMISSION FROM MICROCRYSTALLINE SI CONFINED IN SIO2 MATRIX THROUGH PARTIAL OXIDATION OF ANODIZED POROUS SILICON [J].

ITO, T ;

OHTA, T ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (1A-B) :L1-L3

[8] OPTICAL CHARACTERIZATION OF POROUS SILICON BY SYNCHROTRON-RADIATION REFLECTANCE SPECTRA ANALYSES [J].

KOSHIDA, N ;

KOYAMA, H ;

SUDA, Y ;

YAMAMOTO, Y ;

ARAKI, M ;

SAITO, T ;

SATO, K ;

SATA, N ;

SHIN, S .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2774-2776

[9] VISIBLE ELECTROLUMINESCENCE FROM POROUS SILICON DIODES WITH AN ELECTROPOLYMERIZED CONTACT [J].

KOSHIDA, N ;

KOYAMA, H ;

YAMAMOTO, Y ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2655-2657

[10] EFFICIENT VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON [J].

KOSHIDA, N ;

KOYAMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B) :L1221-L1223

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