ANOMALOUS LOW-FREQUENCY NOISE IN MOS-TRANSISTORS AT LOW-TEMPERATURES

被引：0
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作者：
NAKAHARA, M [1 ]
机构：
[1] FUJITSU LTD,KOBE,KOBE 652,JAPAN
来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1972年 / 55卷 / 06期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：99 / 105
页数：7
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