Modification of mechanical properties of nitrogen-sputtered boron nitride films by ion bombardment

被引:3
作者
Jensen, H. [1 ]
Jensen, U. M. [1 ]
Sorensen, G. [1 ]
机构
[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
关键词
boron nitride; thin films; ion bombardment;
D O I
10.1016/0257-8972(95)08276-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Boron nitride is a fascinating coating material, both in the electronics industry and for tribological applications. For the various applications the crystalline structure is important, and there is a need for studies of its basic nature and of its surface modification by ion beams. A large variety of high temperature processes for production of boron nitride exists, whereas there are only a few reports on low temperature processes, such as reactive r.f. sputtering. In these cases, only boron nitride targets have been used and usually in argon-nitrogen sputtering mixtures. The authors of the present paper have, however, shown that boron nitride can be deposited by a reactive nitrogen-sputtering process from a boron metal target without argon at all. The acoustic scratch test technique was used as a kind of mechanical test for nitrogen-sputtered BN deposited on cemented carbide. The effect of a negative substrate bias and sputter gas mixtures of nitrogen and krypton was studied. Although nitrogen-krypton sputter gas mixtures had only a marginal effect on sputter rates, they had a significant effect on the mechanical film properties. A post-ion bombardment of nitrogen-sputtered BN coatings with nitrogen ions in the hundreds of kiloelectronvolts range was also effective for modification of the mechanical properties. The possibility of ion implanting a lithium catalyst for a crystalline transformation from hexagonal to cubic crystalline structure was discussed, and lithium ion implantation did show a modification of surface friction properties. This novel process of nitrogen sputtering of boron may improve understanding of the fundamental aspects of phase control in the deposition of boron nitride films.
引用
收藏
页码:781 / 787
页数:7
相关论文
共 18 条
[1]  
AITA CR, 1990, MATER SCI FORUM, V54, P1
[2]  
ELENA M, 1993, IN PRESS P 7 C SURF
[3]   EVIDENCE FOR MIXED-PHASE NANOCRYSTALLINE BORON-NITRIDE FILMS [J].
GISSLER, W ;
HAUPT, J ;
CRABB, TA ;
GIBSON, PN ;
RICKERBY, DG .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 :284-289
[4]  
HALVERSON WD, 1990, MATER SCI FORUM, V54, P71
[5]   INFRARED SPECTROSCOPIC INVESTIGATIONS ON H-BN AND MIXED H/C-BN THIN-FILMS [J].
JAGER, S ;
BEWILOGUA, K ;
KLAGES, CP .
THIN SOLID FILMS, 1994, 245 (1-2) :50-54
[6]   DEPOSITION OF BORON-NITRIDE FILMS BY NITROGEN SPUTTERING FROM A BORON-METAL TARGET [J].
JENSEN, H ;
JENSEN, UM ;
SORENSEN, G .
APPLIED PHYSICS LETTERS, 1995, 66 (12) :1489-1491
[7]  
JENSEN H, 1995, SURF COAT TECHNOL
[8]   PHASE EVOLUTION IN BORON-NITRIDE THIN-FILMS [J].
KESTER, DJ ;
AILEY, KS ;
DAVIS, RF ;
MORE, KL .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (06) :1213-1216
[9]   PHASE-CONTROL OF CUBIC BORON-NITRIDE THIN-FILMS [J].
KESTER, DJ ;
MESSIER, R .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :504-513
[10]   GROWTH OF CUBIC BORON-NITRIDE ON SI(100) BY NEUTRALIZED NITROGEN ION-BOMBARDMENT [J].
LU, M ;
BOUSETTA, A ;
SUKACH, R ;
BENSAOULA, A ;
WALTERS, K ;
EIPERSSMITH, K ;
SCHULTZ, A .
APPLIED PHYSICS LETTERS, 1994, 64 (12) :1514-1516