MEASURING TEMPERATURES WITH P-N JUNCTION DIODES

被引:0
|
作者
PHENE, CJ
AUSTIN, RS
HOFFMAN, GJ
RAWLINS, SL
机构
来源
AGRICULTURAL ENGINEERING | 1969年 / 50卷 / 11期
关键词
D O I
暂无
中图分类号
S3 [农学(农艺学)];
学科分类号
0901 ;
摘要
引用
收藏
页码:684 / &
相关论文
共 50 条
  • [21] Accurate extraction of the diffusion current in silicon p-n junction diodes
    Simoen, E
    Claeys, C
    Czerwinski, A
    Katcki, J
    APPLIED PHYSICS LETTERS, 1998, 72 (09) : 1054 - 1056
  • [22] Peripheral current analysis of silicon p-n junction and gated diodes
    Czerwinski, A
    Simoen, E
    Poyai, A
    Claeys, C
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6506 - 6514
  • [23] Spin-dependent current in silicon p-n junction diodes
    Tretyak, O. V.
    Kozonushchenko, O. I.
    Krivokhizha, K. V.
    Revenko, A. S.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2010, 13 (01) : 95 - 97
  • [24] TEMPERATURE RISE OF SILICON P-N JUNCTION AVALANCHE OSCILLATION DIODES
    YAMAGUCHI, M
    OHMORI, M
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1971, 19 (9-10): : 1060 - +
  • [25] Automated method for measuring the energy gap of p-n junction semiconductor diodes with the temperature-voltage method
    Klonkratog, Bhanupol
    Somdock, Nuttakrit
    Damrongsak, Pattareeya
    EUROPEAN JOURNAL OF PHYSICS, 2021, 42 (02)
  • [26] Nonpolar a-plane p-type GaN and p-n junction diodes
    Chakraborty, A
    Xing, H
    Craven, MD
    Keller, S
    Mates, T
    Speck, JS
    DenBaars, SP
    Mishra, UK
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4494 - 4499
  • [27] N-polar GaN p-n junction diodes with low ideality factors
    Nomoto, Kazuki
    Xing, Huili Grace
    Jena, Debdeep
    Cho, YongJin
    APPLIED PHYSICS EXPRESS, 2022, 15 (06)
  • [28] A new measuring method of the thermal resistance of silicon p-n diodes
    Zarebski, Janusz
    Gorecki, Krzysztof
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2007, 56 (06) : 2788 - 2794
  • [30] Topological p-n junction
    Wang, Jing
    Chen, Xi
    Zhu, Bang-Fen
    Zhang, Shou-Cheng
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 187 - +